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FK330301 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOS FET - Panasonic

भाग संख्या FK330301
समारोह Silicon N-channel MOS FET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
1 Page
		
<?=FK330301?> डेटा पत्रक पीडीएफ

FK330301 pdf
FK330301
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1.0 mA, VGS = 0
30
Drain-source cutoff current
IDSS VDS = 30 V, VGS = 0
1.0
Gate-source cutoff current
IGSS VGS = ±10 V, VDS = 0
±10
Gate threshold voltage
Drain-source ON resistance
VTH
RDS(on)
ID = 1.0 mA, VDS = 3.0 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
0.5 1.0 1.5
36
23
Forward transfer admittance
YfsID = 10 mA, VDS = 3.0 V
20 55
Short-circuit input capacitance (Common source) Ciss
12
Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz
7
Reverse transfer capacitance (Common source)
Crss
3
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
RL = 300 W
100
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
RL = 300 W
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VGS = 0 V to 3 V
VIN
50
G
VDD = 3 V
ID = 10 mA
RL = 300
D VOUT
VIN
VOUT
S
90%
10%
10%
90%
ton toff
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
2 Ver. DED

विन्यास 5 पेज
डाउनलोड[ FK330301 Datasheet.PDF ]


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