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DSEC30-06B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Performance Fast Recovery Diode - IXYS

भाग संख्या DSEC30-06B
समारोह High Performance Fast Recovery Diode
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=DSEC30-06B?> डेटा पत्रक पीडीएफ

DSEC30-06B pdf
DSEC30-06B
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 600 V
VR = 600 V
forward voltage drop
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
average forward current
TC = 130°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 400 V f = 1 MHz
t rr reverse recovery time
IF = 15 A; VR = 300 V
-diF/dt = 200 A/µs
EAS
non-repetitive avalanche energy
IAS = 1 A L = 180 µH
IAR repetitive avalanche current VA = 1.5·VR typ.: f = 10 kHz
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max.
600
600
100
0.5
2.53
2.97
1.58
2.02
15
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25°C
0.25
12
2.5
4.5
25
70
0.98 V
27 m
1.6 K/W
K/W
95 W
110 A
pF
A
A
ns
ns
0.1 mJ
0.1 A
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131120b

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डाउनलोड[ DSEC30-06B Datasheet.PDF ]


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