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H01N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Field Effect Transistor - HI-SINCERITY

भाग संख्या H01N60
समारोह N-Channel Power Field Effect Transistor
मैन्युफैक्चरर्स HI-SINCERITY 
लोगो HI-SINCERITY लोगो 
पूर्व दर्शन
1 Page
		
<?=H01N60?> डेटा पत्रक पीडीएफ

H01N60 pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 2/5
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Units
°C/W
°C/W
ELectrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Unit
Off Characteristics
VDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
BVDSS/TJ
Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced
to 25oC)
600
-
-
0.6
-V
- V/oC
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current (VDS=600V, VGS=0V)
Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C)
Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V)
Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V)
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3
Forward Transconductance (VDS=40V, ID=0.5A) *3
Dynamic Characteristics
2-4
- -8
- 0.75 -
V
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VGS=0V, VDS=25V, f=1MHz
- 210 250
- 19 25 pF
- 48
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V, ID=1.1A
RG=25*3
VDS=480V, ID=1.1A
VGS=10V *3
Drain-Source Diode Characteristics and Maximum Ratings
- - 30
- - 60
ns
- - 45
- - 75
- 15 20
- 4 - nC
-3-
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage (VGS=0V, IS=1A)
trr Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
Qrr Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
*3: Pulse Test: Pulse Width 300us, Duty Cycle2%
- - 1A
- - 4A
- - 1.4 V
- 190 -
ns
- 0.53 -
nC
H01N60I, H01N60J
HSMC Product Specification

विन्यास 5 पेज
डाउनलोड[ H01N60 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
H01N60N-Channel Power Field Effect TransistorHI-SINCERITY
HI-SINCERITY


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