DataSheet.in

FJPF2145 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Power Transistor - Fairchild Semiconductor

भाग संख्या FJPF2145
समारोह NPN Power Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FJPF2145?> डेटा पत्रक पीडीएफ

FJPF2145 pdf
Absolute Maximum Ratings(3)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted..
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
EAR(4)
Notes:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (TC = 25°C)
Operating and Junction Temperature Range
Storage Temperature Range
Avalanche Energy (TJ = 25°C, 1.2 mH)
1100
800
7
5
1.5
40
-55 to +125
-55 to +150
15
V
V
V
A
A
W
°C
°C
mJ
3. Pulse test is pulse width 5 ms, duty cycle 10%.
4. Lab characterization data only for reference.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Rθjc
Rθja
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
3.125
70.44
Units
°C/W
°C/W
Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Volt-
age
IC = 1 mA, IE = 0
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 5 mA, IB = 0
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
CIB
COB
fT
Note:
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Volt-
age
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
IE = 1 mA, IC = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.2 A
VCE = 5 V, IC = 1 A
IC = 0.25 A, IB = 0.05 A
IC = 0.5 A, IB = 0.167 A
IC = 1 A, IB = 0.33 A
IC = 1.5 A, IB = 0.3 A
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 0.3 A
IC = 2 A, IB = 0.4 A
VEB = 5 V, IC = 0, f = 1 MHz
VCB = 200 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 0.2 A
5. Pulse test is pulse width 5 ms, duty cycle 10%.
Min. Typ. Max. Units
1100
V
800
7
10
10
20 40
8
0.051
0.055
0.085
0.159 2.000
0.756
0.840 1.500
0.863
1.618
11.39
15
V
V
μA
μA
V
V
V
V
V
V
V
pF
pF
MHz
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
2
www.fairchildsemi.com

विन्यास 12 पेज
डाउनलोड[ FJPF2145 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FJPF2145NPN Power TransistorFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English