DataSheet.in

FJP2160D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Transistor - Fairchild Semiconductor

भाग संख्या FJP2160D
समारोह NPN Silicon Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FJP2160D?> डेटा पत्रक पीडीएफ

FJP2160D pdf
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
ICP Collector Current (Pulse)
IB Base Current
IBP Base Current (Pulse)
PD Power Dissipation (TC = 25°C)
TJ Operating and Junction Temperature Range
TSTG Storage Temperature Range
EAS
Avalanche Energy (TJ = 25°C, 8mH)
* Pulse Test: Pulse Width = 20μs, Duty Cycle 10%
1600
800
12
2
3
1
2
100
- 55 ~ +125
- 65 ~ +150
3.5
Thermal Characteristics Ta = 25°C unless otherwise note
Symbol
Rθjc
Rθja
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.25
80
Units
V
V
V
A
A
A
A
W
°C
°C
mJ
Units
°C/W
°C/W
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Parameter
Test Condition
Collector-Base Breakdown Voltage IC=0.5mA, IE=0
Collector-Emitter Breakdown Voltage IC=5mA, IB=0
Emitter-Base Breakdown Voltage IE=0.5mA, IC=0
Collector Cut-off Current
VCES=1600V, IE=0
Collector Cut-off Current
VCE=800V, VBE=0
Emitter Cut-off Current
VEB=12V, IC=0
DC Current Gain
VCE=3V, IC=0.4A
VCE=10V, IC=5mA
Collector-Emitter Saturation Voltage IC=0.25A, IB=0.05A
IC=0.5A, IB=0.167A
IC=1A, IB=0.33A
Base-Emitter Saturation Voltage
IC=500mA, IB=50mA
IC=2A, IB=0.4A
Input Capacitance
VEB=10V, IC=0, f=1MHz
Output Capacitance
VCB=200V, IE=0, f=1MHz
Current Gain Bandwidth Product
IC=0.1A,VCE=10V
Diode Forward Voltage
IF=0.4A
IF=1A
Min.
1600
800
12
20
20
Typ.
1689
870
14.8
0.01
0.01
0.05
29
43
0.16
0.12
0.25
0.74
0.85
745
15
5
0.76
0.83
Max.
100
100
500
35
Units
V
V
V
μA
μA
μA
0.45
0.35
0.75
1.2
1.2
1000
1.2
1.5
V
V
V
V
V
pF
pF
MHz
V
V
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
2
www.fairchildsemi.com

विन्यास 12 पेज
डाउनलोड[ FJP2160D Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FJP2160DNPN Silicon TransistorFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English