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FQI140N03L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI140N03L
समारोह 30V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI140N03L?> डेटा पत्रक पीडीएफ

FQI140N03L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250µ A
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30 --
-- V
-- 0.03
-- V/°C
-- --
1 µA
-- --
10 µA
-- -- 100 nA
--
--
-100
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
VGS = 10 V, ID = 70 A
-- 0.0038 0.0045
VGS = 5 V, ID =70 A
-- 0.005 0.006
VDS = 15 V, ID = 70 A (Note 4) --
85
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 3400 4420
-- 2090 2720
-- 580
755
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 15 V, ID = 70 A,
RG = 25
(Note 4, 5)
VDS = 24 V, ID = 140 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
60
770
25
250
73
29.5
38.5
130
1500
60
510
95
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 490 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A
-- --
1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 140 A,
-- 70
-- ns
dIF / dt = 100 A/µs
(Note 4)
--
105
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36µH, IAS = 140A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 140A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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डाउनलोड[ FQI140N03L Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FQI140N03L30V LOGIC N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


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